BD130LV – 40V Power, 0.13μm BCDMOS
- Foundry compatible 1.5V low power CMOS
- Industry leading NLDMOS and PLDMOS up to 40V
- Implementation of fully Isolated devices is available
- MIM Capacitor, High-Sheet Poly Resistor and Bipolar devices available
- Embedded NVM available
- Standard 1P4M process with up to 8M available
- Fully characterized PDK and industry standard CAD tools are supported
- Thick metal layer or copper plating for power routing
BD180MV – 45V Power, 0.18μm BCDMOS
- Foundry compatible 5V CMOS with gate OX TDDB to be guaranteed up to 6V
- Optionally CMOS can be operated on 6V (or max 6.6V) with larger gate length
- Wide SOA and very low Rsp performance LDMOS up to 45V
- Implementation of fully Isolated devices is available
- MIM Capacitor, High-Sheet Poly Resistor and Bipolar devices available
- Standard 1P4M process with up to 6M available
- Fully characterized PDK and industry standard CAD tools are supported
- Thick metal layer or copper plating for power routing
BD180LV – 40V Power, 0.18μm BCDMOS
- Foundry Compatible 1.8V CMOS
- Industry-leading NLDMOS up to 40V operation
- Implementation of fully Isolated devices is available
- Complementary Drain Extended CMOS (DECMOS) up to 40V operation
- MIM Capacitor and High-Sheet Poly Resistor available
- Embedded NVM available
- Schottky Diode and Bipolar devices available
- Standard 1P4M process, with up to 6M available
- Fully Characterized PDK and Industry Standard CAD Tools Supported
- Thick Metal Layer or Copper Plating for Power Routing
BD180X – 85V Power, 0.18μm BCDMOS
- Foundry Compatible 1.8V CMOS
- IDM-competitive Ron for NLDMOS and PLDMOS up to 85V operation
- Implementation of fully isolated devices is available
- Complementary Drain Extended CMOS (DECMOS) up to 85V operation
- MIM Capacitor and High-Sheet Poly Resistor available
- Embedded NVM
- Schottky Diode and Bipolar devices available
- Standard 1P4M process, with up to 6M available
- Fully Characterized PDK and Industry Standard CAD Tools Supported
- Thick Metal Layer or Copper Plating for Power Routing
BD350 – 60V or 85V Power, 0.35μm BCDMOS
- 3.3V or 5V logic level
- Complementary DEMOS/LDMOS up to 85V operation
- MIM capacitor and high-sheet poly resistor available
- Embedded NVM available
- NPN and PNP bipolar devices available
- Standard 1P3M process, with 4M optional(Thick Al/Thick Cu available)
- Fully characterized PDK and industry-standard tools
Ultra High Voltage BCD process, ‘UHV 700V’
- 0.35μm layout rules and standard 1P2M process, with up to 4M
- 5.5V CMOS
- Fully Scalable 450V/700V nLDMOS (Non-Epi)
- Available single poly process (20V) & double poly process (Vgs=5V, 20V)
- DECMOS, Bipolar and nJFET devices available
- Digital IP / Library set (Std_Cell, EPROM, EEPROM)
- Embedded NVM (EPROM, EEPROM) available without additional mask
