CMOS Image Sensor (CIS) devices play a key role in a wide range of products such as camcorders, digital cameras and mobile phones. CIS devices, which are now available in compact packages that operate on low power, convert real images into electric signals and then into digital signals. We provide various CIS products designed at 0.11um to 0.18um processing nodes. These include CIF, VGA and Megapixel options using N+/PW photo diode, color filters and microlens technologies.
IS18SI
- 3 Level Aluminum Process
- 0.18um Generic Process
- Own Library for 0.18um Compact Process
- Dual Gate Oxide Process
- Pixel & I/O : 3.3V, Core : 1.8V
- Dark Current Reduction Process
- Thin BEOL Height
- Optimized Photo Layers
IL13SI
- 3 Level Aluminum Process
- Low Power Consumption (Low-Leakage) Process
- Own Library for 0.13um Compact Process
- Dual Gate Oxide Process
- Pixel & I/O : 3.3V, Core : 1.5V
- Dark Current Reduction Process
- Thin BEOL Height at Pixel area
- Minimized photo layers
IL11SI
- 3 Level Aluminum Process (4 level metal optional)
- Low Power Consumption (Low-Leakage) Process
- Own Library for 0.11um Compact Process
- Dual Gate Oxide Process
- Pixel & I/O : 3.3V, Core : 1.5V
- Dark Current Reduction Process
- Thin BEOL Height
- Optimized Photo Layers
IL11SJ
- 3 Level Aluminum Process
- M0 local interconnection (only pixel area)
- Low Power Consumption (Low-Leakage) Process
- Own Library for 0.11um Smart Tech. Process
- Dual Gate Oxide Process
- Pixel & I/O : 2.8V, Core : 1.5V
- Dark Current Reduction Process
- Thin BEOL Height
- Optimized Photo Layers
- Option process: 8fF MIM, Optimized Light guide process
