HHGrace provides variety of silicon process solutions for RF ICs in wireless communication and wired optical communications, including SiGe Bipolar/BiCMOS, RF LDMOS, logic-compatible RF CMOS and SOI (silicon on insulator) RF CMOS.
0.13μm/0.18μm SiGe Bipolar/BiCMOS
- The innovative HBT (hetero junction bipolar transistor) structure providing high performance and effective cost for RF solutions, with more than 400 patent applications
- Various options, outstanding performance and continuous development plan to support flexible designs
- High precision models and complete design kits for flexible design-in
- Tailor-made solutions to optimize performance and power efficiency
0.13μm RF CMOS
- Compatible with 0.13μm generic logic process
- Single poly, up to seven layers of metal (Aluminum) interconnects
- Standard threshold voltage (Vt) and multi Vt options
- Hi-Rsh poly resistor, MIM capacitor, varactors, thick-top-metal inductor and other device options/li>
- Fully scalable design kits for flexible design-in
0.18μm RF CMOS
- Compatible with 0.18μm generic logic process
- Single poly, up to six layers of metal (Aluminum) interconnects
- Standard threshold voltage (Vt) and multi Vt options
- Hi-Rsh poly resistor, MIM capacitor, varactors, thick-top-metal inductor and other device options
- Fully scalable design kits for flexible design-in
0.2μm SOI RF CMOS
- Tailored and optimized for wireless RF front-end
- Provides a 2.5V device with lower switch insertion loss, higher isolation and better linearity
- Provides convenience to designers who focus on optimizing both the RF performance and die size with PDK offering
- Provides PSP model
