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首页 MPW班车日历 Foundry GlobalFoundries工艺列表 CIS-IS18SI,IL13SI,IL11SI,IL11SJ+ 0.18um General Logic,0.18um Analog Specialized,0.11um Digital + Analog+ BCDMOS -BD130LV/40V，BD180MV/45V，BD180LV/40V，BD180X/85V，BD350/60V/85V，UHV700V 180nm BCD Power Management Platform 65nm BCD Power Management Platform MS/CMOS 0.18um 0.13um 65nm 45nm HVCMOS Platform CMOS IMAGE SENSORS(CIS) RF-SOI & RF-CMOS Platforms GaN eFlash HV Discrete BCD / UHV / SO XH035 XH018 XT18 XS018 XP018 XR013 CIS180 Image Sensor 1.8V/3.3V 2P4M L180 EFLASH/EE2PROM L180 Mixed Mode/RF 1.8V/3.3V 1P6M L130 Logic/Mixed-Mode/RF L110AE Logic/Mixed-Mode/RF L65N Logic/Mixed-Mode/RF – Standard Performance L65N Logic/Mixed-Mode/RF – Low Leakage 40N Logic/Mixed-Mode – Low Power 28 nm Logic and Mixed-Mode High Performance Compact 0.18µm CMOS High Voltage BCD Gen II 0.18µm CMOS Logic or MS/RF, General Purpose 1.8V/3.3V 0.18µm CMOS Logic or MS/RF, General Purpose 1.8V/5V 0.13µm CMOS Logic or MS/RF, General Purpose 0.13µm CMOS Logic or MS/RF, Low Power 90nm CMOS Logic or MS/RF, General Purpose 90nm CMOS Logic or MS/RF, Low Power 65nm CMOS Logic or MS/RF, General purpose 65nm CMOS Logic or MS/RF, Low Power 40nm CMOS Logic or MS/RF, General Purpose 40nm CMOS Logic or MS/RF, Low Power 28nm CMOS HPC Logic, RF 16nm CMOS logic FinFet Compact 0.35μm logic, mixed signal/RF, high-voltage, BCD, EEPROM ,eFlash 0.25μm Logic，mixed signal/RF CMOS (for 3.3V and 5V applications) 0.18μm logic, mixed signal/RF, high-voltage, BCD, EEPROM ,eFlash 0.15μm logic, mixed signal, high-voltage, BCD 0.13/0.11μm Logic, Mixed signal, EEPROM 90nm Logic, Mixed signal/RF 65nm/55nm logic, mixed signal, high-voltage,eFlash 40nm logic, high-voltage,eFlash 28nm CMOS Logic - LP,GP,HP SK hynix system ic Technology Porfolio Embedded Non-Volatile Memory ,eFlash eEEPROM eOTP/eMTP/eLogicEE Logic & mixed-signal ,90nm 0.13μm 0.18μm 0.5μm RF-SiGe Bipolar/BiCMOS, RF LDMOS, RF CMOS and SOI Power Management,BCD/CDMOS Power Discrete,MOSFET IGBT Standard Analog-0.25um Standard Analog-0.35um Standard Analog-0.5um/0.35um Power IC-0.18um,BCD G1 (7V-24V),G2S (7V-80V), G2S (80V-120V), G3 (7V-40V) Power IC-0.25um，BCD G2(12V-60V) Power IC-0.8um,700V BCD G3S ,40V HV Power IC-1.0um，600V HVIC Mixed-Signal/RF-0.11um Mixed-Signal/RF-0.18um Power Discrete-Normal Trench,60V-100V 20-30V 20-40V DMOS Power Discrete-Normal Planar，50~1200V Planar DMOS Power Discrete-Advanced PD ，30V-45V SGT DMOS 班车信息 TSMC MPW预定信息 计算器 流片计算器 晶圆可切割芯片数（DPW）计算器 服务流程 三级加急服务 服务操作台 服务流程 知识中心 流片技术工具分享 晶圆接受测试（WAT）：半导体制造的质量守门员 芯片良率深度解析：制造工艺的“生命体征” 芯片流片全景解析：从设计到量产的全流程深度剖析 芯片设计EDA工具全解析：数字化时代的设计引擎 国内外模拟芯片设计的EDA点工具汇总 国内外模拟芯片设计的EDA点工具汇总 国内外模拟芯片设计的EDA点工具汇总 流片技术案例 Foundry Link 180nm混合信号芯片流片案例：高性价比智能传感芯片一次成功 Foundry Link 22nm超低功耗AI芯片流片案例：多源融合边缘计算芯片一次成功 Foundry Link 28nm RF工艺流片案例：高效协同助力5G射频芯片快速量产 Foundry Link 40nm MPW流片案例：高可靠性多器件集成芯片一次成功 合作代工厂清单